Mesh generation algorithms for three-dimensional semiconductor process simulation by Luis Villablanca

Cover of: Mesh generation algorithms for three-dimensional semiconductor process simulation | Luis Villablanca

Published by Hartung-Gorre in Konstanz .

Written in English

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  • Semiconductors -- Design and construction -- Computer simulation.,
  • Finite element method.

Edition Notes

Includes bibliographical references (p. 97-102).

Book details

StatementLuis Villablanca.
SeriesSeries in microelectronics ;, v. 97
LC ClassificationsTK7871.85 .V543 2000
The Physical Object
Pagination103 p. :
Number of Pages103
ID Numbers
Open LibraryOL6885101M
ISBN 103896495836
LC Control Number00465007

Download Mesh generation algorithms for three-dimensional semiconductor process simulation

The growing importance of three-dimensional simulation has made mesh generation the key to accurate and fast solutions. Where in two dimensions.

Abstract. This paper presents the concepts of a mesh generation technique for 3D process simulation involving structure deformation.

One of the main problems is the displacement of boundaries leading to a (complete) remeshing of the structure, large Cited by: 5. Generation of a three-dimensional dual mesh appropriate for the use of a co-volume scheme is a much more difficult issue.

Here, an approach is being developed where the. 2(d) shows a result of mesh generation for the NURBS surface with nodes, triangles, and mean quality factor [7]. The calculation time is only second on Sun Ultra 10 workstation. We have applied our mesh generation algorithm to the cell-based geometry representation for surface smoothing and mesh generation.

Fig. The three-dimensional simulation of fabrication processes for the semiconductor industry re- quires a very robust mesh generation algorithm together with a reliable update of the geometry.

While the process description of a single process step remains simple: dry or wet etch with a. An Algorithm for Three-Dimensional Mesh Generation for Arbitrary Regions with Cracks J. Cavalcante Neto 1, P. Wawrzynek2, M. Carvalho, L. Martha1 and A.

Ingraffea2 1Department of Civil Engineering and Computer Graphics Technology Group (Tecgraf), Pontifical Catholic University of Rio de. methods for mesh generation, and mesh “clean-up” methods for improving an existing mesh.

Unfortunately, nearly all the algorithms developed during this period are fragile, and produce unsatisfying meshes when confronted by complex domain geometries and stringent demands on element Size: 1MB.

The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation.

4 Three-Dimensional Delaunay Refinement Algorithms 85 of mesh generation has proven to be more challenging than the entire remainder of the simulation process.

2 Jonathan Richard Shewchuk Figure ical mesh generation algorithms are often based upon the idealized assumption that the input geometry is. Modelling of Silicon Interstitial Surface Recombination Velocity at Non-Oxidizing Interfaces.- Efficient Hybrid Solution of Sparse Linear Systems.- Mesh Generation for 3D Process Simulation and the Moving Boundary Problem.- Three-Dimensional Grid Adaption Using a Mixed-Element Decomposition Method 5.

Concept of three-dimensional mesh generation. The concept of generation of intermediate nodes in a one-dimensional line segment can be extended to two as well as three-dimensional structures.

Assemblage of stiffness matrix is based on the fact that each element is a Cited by: 5. Though only one type of element is examined in the cases of two- and three- dimensional mesh generation, a variety of elements can be incorporated, conveniently depending on the user's requirement.

REFERENCES 1. Zienkiewicz and D. Phillips, An automatic mesh generation scheme for plane and curved surfaces by 'isoparametric' coordinates Cited by: 4. The activation of volume mesh, under mesh generation option provides three dimensional meshes for the specified solver format.

After completion of mesh generation in different parts, the assembled mesh has been imported in flow solver is shown in the Fig(a) with grid interfaces between parts so that no artificial walls present in the volume Cited by: 2.

Research in Mesh Generation. Argentina: Research at Computational Mechanics Lab, Centro Atomico Bariloche, is on algorithms for the generation and optimisation of tetrahedral element meshes and on computational geometry applications to fem pre/post-processing.

Tet> Australia: Scott Sloan, Department of Civil Engineering & Surveying, University of Newcastle, works on. three-dimensional domains.

Structured mesh generation algorithms were based on the concept of isoparametric coordinates. In structured surface mesh generation software, quadrilateral mesh elements were generated for complex three-dimensional surfaces and these elements were then triangulated in order toFile Size: KB.

Three-Dimensional Integrated Process Simulator: 3D-MIPS * M. Fujinaga, T. Kunikiyo, T. Uchida, K. Kamon, JV. Kotani, and T.

Hirao Effect of Process-Induced Mechanical Stress on Circuit Layout H. Miura and Y. Tanizaki The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI File Size: KB. Most adaptive mesh generation algorithms employ a 3-refinement method.

This method, although easy to employ, provides a mesh that is often too coarse in some areas and over refined in other areas. Because this method generates 27 new hexes in place of a single hex, there is little control on mesh density.

Abstract. Due to the complexity of 3D geometry structure, regular gridding algorithms often generate a very large amount of mesh points which requires an enormous amount of computational power for later device and process by: 3. The ability to generate a suitable finite element mesh in an automatic fashion is becoming the key to being able to automate the entire engineering analysis process.

However, placing an all-hexahedron mesh in a general three-dimensional body continues to be an elusive goal. The approach investigated in this research is fundamentally different from any other that is known Author: Walter R.

Witkowski, Joseph Jung, Clark R. Dohrmann, Vitus J. Leung. The author reviews a number of strategies on mesh adaptation from a mathematical point of view and compares their performances in solving nonlinear diffusion models from semiconductor process modeling. Some new strategies are then proposed that improve on the existing ones.

The analysis of the strategies based on monitoring interpolation errors and local truncation errors Cited by:   A new approach to fully unstructured three-dimensional Delaunay mesh generation with improved element quality. International Conference on Simulation of Semiconductor Processes and Devices.

SISPAD '96 (IEEE by: Reliable Solid Modeling for Three-Dimensional Semiconductor Process and Device Simulation. In Int. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits NUPAD V, pagesHonolulu, J.

Xu and L. Zikatanov. A Monotone Finite Element Scheme for Convection-Diffusion Equations. 1 AUTOMATIC MESH GENERATION 3 • Mesh Validitytopological compatibility mesh is topologically compatible with model entity Ed of dimension-if each mesh entityd M d−1 classified to Ed is shared exactly by-two mesh entitiesif each mesh entity M dMclassified tod−1 classified toEd Ed−1 m forming m times boundary of model entity Ed is shared exactly by m mesh entitiesFile Size: KB.

This book covers the following topics: process simulation and equipment modeling, device modeling and simulation of complex structures, device simulation and parameter extraction for circuit models, integration of process, device and circuit simulation, practical applications of simulation, algorithms and : Hardcover.

technique to three dimensional problems, something we be-lieve will be easy since both the level set method and our mesh generation method generalize naturally to any dimension. REFERENCES [1] G. Allaire, F. Jouve, and A.-M. Toader. A level-set method for shape optimization.

C.R. Acad. Sci. Paris, Ser. I, –, [2] S. Osher and. The proposed mesh generation algorithm (imageMesher) extends the mesh generation technique of Bern et al. () to images as input. Previous algorithms with shape and size bounds have all been based on triangulating domains that are either: (a) vertex set, (b) lines, (c) polygons, or (d) planar straight line graphs (PSLGs).

White, David R. “Automated Hexahedral Mesh Generation by Virtual Decomposition”, Proceedings, 4th International Meshing Roundtable, pp () Yerry, Mark A. and Mark S, Shephard, “Three-Dimensional Mesh Generation by Modified Octree Technique”, International Journal for Numerical Methods in Engineering, 20, ().

NEW GRID-BASED FINITE ELEMENT MESH GENERATION ALGORITHMS FOR NON-MANIFOLD GEOMETRIC MODELS Generating a mesh for geometric model that has gone through idealization has been a complex problem due to the presence of mixed three-dimensional and two-dimensional sub-parts.

These sub parts are usually the source of non. The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD ) continues a long series of conferences and is held in September at the TU Wien, Vienna, Austria.

The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and : Springer-Verlag Wien. @article{osti_, title = {Genetic algorithms and simulated annealing}, author = {Davis, L.}, abstractNote = {This RESEARCH NOTE is a collection of papers on two types of stochastic search techniques-genetic algorithms and simulated annealing.

These two techniques have been applied to problems that are both difficult and important, such as designing semiconductor.

For the process simulation tool, about 4 Mbytes of memory is required for a 20, node mesh. Anno Accademico { ANSYS semiconductor design simulation software and modeling tools offer you early power budgeting analysis for high-impact design decisions and foundry-certified accuracy needed for IC sign-off.

The generation of three‐dimensional unstructured grids using the advancing‐front technique is described. This technique has been shown to be effective for the generation of unstructured grids in two dimensions.

1,2 However, its extension to three‐dimensional regions required algorithms to define the surface and suitable data structures that avoid excessive CPU‐time overheads for.

Efficient Algorithms for Three-Dimensional Etching and Deposition Simulation W. Pyka, R. Martins, and S. Selberherr Institute for Microelectronics, TU Vienna Gusshausstr.A Vienna, Austria Abstract The reduction of computing time without loss of accuracy is a very important task for three-dimensional process simulators.

Jianzheng Zuo, Xiaomin Deng and Michael A. Sutton, Advances in tetrahedral mesh generation for modelling of three‐dimensional regions with complex, curvilinear crack shapes, International Journal for Numerical Methods in Engineering, 63, 2, (), ().Cited by: Mesh generation plays important role in numerical simulation and arises in many fundamental prob lems and reallife applications.

Currently methods for tetrahedral mesh generation in domains of complex geometry are fairly well developed (see [1–8]). Software solutions and research codes in various applied fields rely on these methods.

Before con. Simulation of Semiconductor Devices and Processes Volume 4 Edited by Wolfgang Fichtner Switzerland Proceedings of the 4th International Conference on Simulation of Semiconductor Devices and Processes held at the Federal Institute of Technology Zurich, Switzerland Three-Dimensional Device Simulation Chairperson: M.

Orlowski, Motorola. Purpose – Develop a new three-dimensional discrete element code (BLOKS3D) for efficient simulation of polyhedral particles of any size.

The paper describes efficient algorithms for the most important ingredients of a discrete element code. Design/methodology/approach – New algorithms are presented for contact resolution and detection (including neighbor search and.

Two-Dimensional Semiconductor Device Simulation of Trap-Assisted Generation-Recombination Noise Under Periodic Large-Signal Conditions and Its Use for Developing Cyclostationary Circuit Simulation Models Juan E.

Sanchez, Member, IEEE, Gijs Bosman, Senior Member, IEEE, and Mark E. Law, Fellow, IEEE. mesh-based numerical methods. In the finite element method, challenges include mesh generation for geometrically complex domains, avoidance of severe element distortions, and mesh align-ment and refinement for modeling problems with discontinuities and singularities [1].

Mesh generation is time-consuming andFile Size: 3MB. Mesh generation is a very complex and time demanding issue in a finite element analysis. Additionally, quadrilateral two-dimensional meshes present several numerical advantages when compared with triangular meshes [1].

For three-dimensional analysis, hexahedral elements have also some advantages over tetrahedral meshes [1]. Get this from a library! Simulation of Semiconductor Processes and Devices SISPAD [Kristin Meyer; Serge Biesemans] -- This volume contains the proceedings of the International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results.Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec\u00AD trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.CFD-Micromesh, three-dimensional (3D) geometry building and mesh generation from layouts, designed primarily for the special needs of the microelectronics and MEMS industry.

tri> sur> tet> TAM (Andrei V. Smirnov): tool-assisted mesh generation for the simulation of biomedical flows.

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